Charge transport processes in a superconducting single-electron transistor coupled to a microstrip transmission line
نویسندگان
چکیده
منابع مشابه
Charge sensitivity of superconducting single-electron transistor
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either SISIS or NISIN type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of a similar transistor made of normal metals or semiconductors. The reason is that the superconducting energy gap, in contrast to the Coulomb blockade, is not sme...
متن کاملSuperconducting Microstrip-Fed Antenna Coupled to a Microwave Kinetic Inductance Detector
A proper antenna to couple to a microstrip Microwave Kinetic Inductance Detector (MKID) is designed and simulated. A twin-slot microstrip-fed inline antenna is designed for frequency band of 600-720~GHz integrated with an elliptical lens and coupled to the MKID. A systematic design procedure for design of such antenna with microstrip inline feeding is presented. Whole structure of lens and twin...
متن کامل2 00 5 Dynamics of a nanomechanical resonator coupled to a superconducting single - electron transistor
We present an analysis of the dynamics of a nanomechanical resonator coupled to a superconducting single electron transistor (SSET) in the vicinity of the Josephson quasiparticle (JQP) and double Josephson quasiparticle (DJQP) resonances. For weak coupling and wide separation of dynamical timescales, we find that for either superconducting resonance the dynamics of the resonator is given by a F...
متن کاملCharge transport in voltage-biased superconducting single-electron transistors.
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an “odd” quasiparticle in the island leads to a 2e-periodic dependence of the current on the gate charge. We evaluate the I − V characteristic in the framework of a model whic...
متن کاملModeling and Simulation of a Molecular Single-Electron Transistor
In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2002
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.65.060501